Title:
COMPOUND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2940455
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To make it possible to well prevent deposition of Al on the surface of an anode electrode by a method wherein the anode electrode is constituted of an ohmiccontact layer, which is provided in ohmic contact to a compound semiconductor region, a diffusion barrier layer, which is formed on the ohmic contact layer, and metal layer for connection use, which is formed on the diffusion barrier later.
SOLUTION: An anode electrode 8 is formed on the upper surface of a contact layer 7, which is the uppermost layer of a light-emitting diode, and this anode electrode 8 is provided with an AuGeNi layer 8a, which is used as an ohmic contact layer, and is provided with an Au layer 8b for enhancing a conceivability, a diffusion barrier layer 8c containing nitrogen and oxygen, a Ti layer 8d having an action a diffusion barrier action and continuity and an Au layer 8e which is used as a metal layer for connection use for enhancing a wire bonding, which are formed in order on the layer 8a. Thereby, deposition of Al on the surface of the electrode 8 can be well prevented.
Inventors:
TADA YOSHIAKI
Application Number:
JP34803295A
Publication Date:
August 25, 1999
Filing Date:
December 15, 1995
Export Citation:
Assignee:
SANKEN DENKI KK
International Classes:
H01L21/28; H01L33/30; H01L33/40; (IPC1-7): H01L33/00; H01L21/28
Domestic Patent References:
| JP4137620A | ||||
| JP57117284A |
Attorney, Agent or Firm:
Takano Noritsuji
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