PURPOSE: To form a transparent conductive film, such as an ITO film with little residual amount after etching by not only unnecessitating the addition of H2 to sputtering gas even in forming a transparent film, such as an ITO film on an insulating body substrate but also relaxing the impulse of electrons and negative ions on the ITO film to prevent the crystallization of the film without making the insulating body substrate be at floating potential.
CONSTITUTION: Sputter particles are made to sputter a target or particularly from a target 5 which a mixture of iridium oxide and tin oxide is sintered to form by a magnetron sputtering method. While the sputter particles sputtered from the target 5 are formed into a transparent conductive film, particularly a ITO film on an insulating body substrate 11, negative voltage, concretely that of 10-300V absolute value of voltage, is applied to the transparent film (ITO film) on the insulating body substrate 11.
ONO YASUNORI
SAKUMICHI KUNIYUKI
SETOYAMA HIDETSUGU
KAMEI MITSUHIRO
UMEHARA TANOSHI
SUZUKI TETSUAKI
