PURPOSE: To freely manufacture a conductive film and an insulation film by making at least one polar dielectric film of the films having dielectric heterostructure to be Langmuir-Blodgett's film.

CONSTITUTION: A thin Al vapor deposited film 3 is coated on an SiO2 insulation film 2 on a silicon substrate 1, and on the top of it, (non-polar/polar) dielectric hetero film 4 formed of a non-polar film 4-1 and a polar film 4-2 is formed. On the top of it, a thin Au vapor deposited film 5 is applied. Further, on the tap of it, Au electrodes 1-9 are vapor deposited. The resistance value of the Al deposited film is about 1.5kΩ when measured with a pair of 10mm wide electrodes attached, with interval of 30mm, in the direction of film surface, and that of Au vapor deposited film 3 is 107Ω or higher, so the resistance of both vapor deposited films is large. Vapor deposited films of Al and Au contact each other at one end. Whereas, in the (polar/non-polar) structure in which the polar film 4-2 is applied an the Al vapor deposited film 3 before the non- polar film 4-1 is applied, the dielectric hetero film serves as an insulation film, so a dielectric film can be farmed only by changing stacking order.