Title:
CONTACTLESS ELECTRICAL MEASUREMENT OF THICKNESS OF THIN OXIDE LAYER
Document Type and Number:
Japanese Patent JP3245050
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To enable accurate measurement of a thickness of a very thin insulating layer on a semiconductor substrate, by comparing an actually measured value of a change in a surface potential with respect to deposited charge with a theoretical value.
SOLUTION: When a fixed density of charge is repetitively applied onto a surface of an insulating layer provided on a semiconductor substrate, a characteristic 7 is obtained which indicates a theoretical relation between band bending and bias to the layer and substrate with respect to assumed values of the thickness of the layer. An experimental band-bending-to-bias characteristic is determined from varied measurement of a potential on the layer to deposited charge when the fixed density of charge is repetitively applied. Then, the theoretical and experimental characteristics are compared with each other to confirm a difference therebetween in a charged region in the characteristics, the assumed thickness value is repetitively incremented with use of the measured change of the surface potential to thereby determine a corresponding experimental band-bending-to-bias characteristic 8". The corresponding characteristics 8" are compared with the theoretical characteristic 7 until one of the corresponding characteristics coincides with the theoretical characteristic 7 in the charged region.
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Inventors:
Roger Leonard Berquill
Application Number:
JP10919996A
Publication Date:
January 07, 2002
Filing Date:
April 30, 1996
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
G01B21/08; G01R31/28; H01L21/66; (IPC1-7): H01L21/66; G01B21/08
Domestic Patent References:
| JP8236591A | ||||
| JP5206243A | ||||
| JP6369024A |
Attorney, Agent or Firm:
Hiroshi Sakaguchi (1 person outside)
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