Title:
パッド寿命を向上させるための化学機械研磨パッドコンディショナの方向速度の制御
Document Type and Number:
Japanese Patent JP2005509531
Kind Code:
A
Abstract:
A method, apparatus and medium of conditioning a planarizing surface includes installing a wafer to be polished in a chemical mechanical polishing (CMP) apparatus having a polishing pad and a conditioning disk, polishing the wafer under a first set of pad conditioning parameters selected to maintain wafer material removal rates with preselected minimum and maximum removal rates, determining a wafer material removal rate occurring during the polishing step, calculating updated pad conditioning parameters to maintain wafer material removal rates within the maximum and minimum removal rates, and conditioning the polishing pad using the updated pad conditioning parameters, wherein the updated pad conditioning parameters are calculated by a pad wear and conditioning model that predicts the wafer material removal rate of the polishing pad based upon the rotational speed and direction of the conditioning disk.
Inventors:
Young Joseph Pike
Application Number:
JP2003505115A
Publication Date:
April 14, 2005
Filing Date:
June 17, 2002
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
B24B53/017; B24B37/005; B24B37/04; B24B49/03; B24B49/18; B24B53/007; G05B19/00; G05B19/19; G05B19/418; H01L21/00; H01L21/304; H01L21/66; H01L21/3105; (IPC1-7): B24B37/00; B24B53/02; H01L21/304
Attorney, Agent or Firm:
Yoshikazu Tani
Kazuo Abe
Kazuo Abe