CONTROL OF SEMICONDUCTOR PROCESS

Japanese Patent JPS59167010

A

PURPOSE:To reduce the scattering of the coating film thickness by a method wherein physical properties of a photoresist and the circumstances in a rotary coating equipment are reflected in a rotary coating film thickness model to determine the revolution of a spinner. CONSTITUTION:Film thickness test data 41 are given to a spinner revolution calculator 3 by a coating film thickness test equipment 4 after the rotary coating process. Signals 11 which show gas pressure, gas density, the biscosity of a photoresist and the like in a spinner rotating equipment are given to the spinner revolution calculator 3 by a rotary coating equipment 1 as the signals 12 through a controller 2. The target coating film thickness 5 determined by the design or the like is also given. After the film thickness is given like this way, the film thickness 5 is reflected in the rotary coating film thickness determined by the test value of the coating film thickness processed in the past to determine the revolution 21 of the spinner. The revolution 21 is given to the controller 2 and the equipment 1 is controlled by the controller 2 in accordance with the revolution signal 22 through the controller.

JPH0697194	MANUFACTURE OF THIN FILM TRANSISTOR
JPH08153860	SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURE THEREOF
JP2002008579	ION IMPLANTATION DEVICE AND ION IMPLANTATION METHOD

MATSUBA IKUO
MATSUMOTO KUNIAKI

JP3926883A

September 20, 1984

March 11, 1983

Click for automatic bibliography generation  

HITACHI LTD

H01L21/265; H01L21/027; H01L21/18; H01L21/31; (IPC1-7): H01L21/265; H01L21/30; H01L21/316

Akio Takahashi

Previous Patent: METHOD OF PRODUCING ELECTRODE MATERIAL FOR ELECTROLYTIC CONDENSER

Next Patent: JPS59167011