PURPOSE: To improve the controllability of etching, by measuring the intensity of deisred spectrum selected from desired wavelength in the plasma etching of a material contg. Si so as to detect correctly the end point and depth of etching.
CONSTITUTION: In plasma etching of Si or Si compound with fluorine compound, light-emitting spectra of 250.69, 251.612, 288.158, 442.549nm wavelength are generated by the excitation of Si atom, and spectra 436.82, 440.05nm and 436W 442.549nm wavelength are generated by the excitation of SiF molecules. From the start of electric discharge, the intensities of these spectra are measured continuously, hereby the end point of partial etching and the end point of etching over the the whole surface of a sample are detected. The depth of etching is detected from the integrated value of spectral intensity with respect to time by linear relationship. The controllability of dry etching is remarkably improved by using the detected values.
NISHIMATSU SHIGERU
SUZUKI KEIZOU
SHIKAMATA ICHIROU
| JPS5135639A | 1976-03-26 |