Title:
半導体導波路デバイスにおける出力ビーム発散の制御
Document Type and Number:
Japanese Patent JP2007508687
Kind Code:
A
Abstract:
A semiconductor laser device incorporates a beam control layer for reducing far field and beam divergence. Within the beam control layer, a physical property of the semiconductor material varies as a function of depth through, the beam control layer, by provision of a first sub-layer in which the property varies gradually from a first level to a second level, and a second sub-layer in which the property varies from said second level to a third level. In the preferred arrangement, the conduction band edge of the semiconductor has a V-shaped profile through the beam control layer.
Inventors:
Kiu, Bokan
Application Number:
JP2006530552A
Publication Date:
April 05, 2007
Filing Date:
September 16, 2004
Export Citation:
Assignee:
Intense Limited
International Classes:
H01S5/343; G02B6/122; H01S5/22; H01S5/223; H01S5/32; H01S5/34
Domestic Patent References:
| JPH05243669A | 1993-09-21 | |||
| JP2002299768A | 2002-10-11 |
Attorney, Agent or Firm:
Mijiro Abe
Yoshikazu Takei
Yoshikazu Takei