Title:
CORRECTION OF PROXIMITY EFFECT
Document Type and Number:
Japanese Patent JPH05343305
Kind Code:
A
Abstract:
PURPOSE: To provide an electron beam exposure method, including proximity effect correction technology for applied exposure bias effect. CONSTITUTION: This is a method for correcting a proximity effect of an image pattern on the photoresist in an electron beam exposure system which is characterized in that an exposure bias is first applied to all the shapes. In the system, first an exposure is made evenly (a proximity effect is corrected) in a specified region of an original shape 10. Then, exposure is conducted in the boundary of a shape 14 applied with a bias for completing the development of the resist.
Inventors:
MAIKERU JIERARUDO ROOZENFUIIRU
SAMIYUERU JIYONASU UINDO
SAMIYUERU JIYONASU UINDO
Application Number:
JP24313792A
Publication Date:
December 24, 1993
Filing Date:
September 11, 1992
Export Citation:
Assignee:
IBM
International Classes:
G03F7/20; H01L21/027; (IPC1-7): H01L21/027; G03F7/20
Domestic Patent References:
| JPS6398128A | 1988-04-28 |
Attorney, Agent or Firm:
Koichi Tonmiya (4 outside)