Title:
CR-N-BASED STRAINED RESISTANCE FILM, MANUFACTURE THEREFOR AND STRAIN SENSOR
Document Type and Number:
Japanese Patent JP3642449
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a highly stable high-sensitivity thin film for strain sensor by reducing the absolute value of the resistance-temperature coefficient of a Cr thin film, while maintaining the gage factor of the Cr thin film as much as possible.
SOLUTION: This resistance film is set to be composed of a thin film, a having a composition expressed by a general formula Cr100-x-yNxMy, where M represents one or two or more kinds of elements selected form among Ti, V, Nb, Ta, Ni, Zr, Hf, Si, Ge, C, O, P, Se, Te, Zn, Cu, Bi, Fe, Mo, W, As, Sn, Sb, Pb, B, Ga, In, Tl, Ru, Rh, Re, Os, Ir, Pt, Pd, Ag, Au, Co, Be, Mg, Ca, Sr, Ba, Mn, Al, and rare-earth elements and x and y are atomic percentages specified satisfying relations of 0.0001≤x≤30 and 0≤y≤30, and 0.0001≤x+y≤500, a crystal structure composed mainly of the bcc structure or a mixed structure of the bcc structure and A15-type structure, a gage factor of ≥2, and temperature coefficient of an electric-resistance -4×10-4 to 4×10-4/°C.
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Inventors:
Eiji Niwa
Yoshihiro Sasaki
Tsuyoshi Masumoto
Yoshihiro Sasaki
Tsuyoshi Masumoto
Application Number:
JP10803997A
Publication Date:
April 27, 2005
Filing Date:
March 21, 1997
Export Citation:
Assignee:
Electromagnetic Materials Research Institute
International Classes:
G01B7/16; H01C7/00; H01C17/00; (IPC1-7): H01C7/00; G01B7/16; H01C17/00
Domestic Patent References:
| JP6300649A | ||||
| JP6213612A | ||||
| JP7306002A | ||||
| JP64042101A | ||||
| JP10038727A |
Attorney, Agent or Firm:
Hiroshi Takayama
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