Title:
CRYSTAL GROWTH DEVICE
Document Type and Number:
Japanese Patent JP3168276
Kind Code:
B2
Abstract:
PURPOSE: To grow a thin-film while being controlled at a monoatomic layer level.
CONSTITUTION: A crystal growth device is composed of an airtight vessel 6, in which a substrate crystal 13 mounted into a vacuum vessel 2 is housed, a gas exhaust valve from the airtight vessel into the vacuum vessel, a control valve 9 for the quantity of a gas leaked from the airtight vessel, raw material gas introducing pipings 16, 21 into the airtight vessel, a heating apparatus 14 for the substrate crystal installed into the airtight vessel, an exhauster 3 evacuating the inside of the vacuum vessel to a high degree, and a raw material gas supply controller consisting of mass flow controllers 18, 23 supplying the raw material gas at predetermined flow rate and time and valve groups 17, 22. The substrate crystal 13 is irradiated alternately with two kinds or more of raw material gases, the gas exhaust valve set up into the airtight vessel is driven while being synchronized with the changeover of the gases and the crystal can be grown. Electron-ray incident and outgoing windows are further fitted to the airtight vessel in the crystal growth device having the same constitution, and the crystal can be grown by the same operation.
Inventors:
Fujisaki Yoshihisa
Toru Haga
Shinichiro Takaya
Toshimitsu Miyata
Kenji Okumura
Nobunori Ohmori
Toru Haga
Shinichiro Takaya
Toshimitsu Miyata
Kenji Okumura
Nobunori Ohmori
Application Number:
JP22847792A
Publication Date:
May 21, 2001
Filing Date:
August 27, 1992
Export Citation:
Assignee:
Air Water Inc.
International Classes:
H01L21/203; H01L21/205; (IPC1-7): H01L21/205
Domestic Patent References:
| JP61183922A | ||||
| JP2311A | ||||
| JP574705A | ||||
| JP425240U |
Attorney, Agent or Firm:
Yoshihiko Izumi (1 person outside)