To increase an open voltage, by suppressing carrier recombination on the surface of crystal silicon by providing an amorphous thin-film layer on the surface of crystal silicon in a method in which damage is less than before, in a crystal silicon solar cell.
The crystal silicon solar cell uses a one-conductivity type single-crystal silicon substrate of ≤250 μm in thickness, has a p-type silicon-system thin-film layer on one surface of the single-crystal silicon substrate, has an n-type silicon-system thin-film layer on the other surface of the single-crystal silicon substrate, includes transparent electrodes on the p-type and n-type silicon-system thin-film layers, and is provided with collector electrodes further on the transparent electrodes and protective layers further thereon. The crystal silicon solar cell is characterized in that a compound layer having amorphous aluminum oxide in major proportions is formed between the single-crystal silicon substrate and p-type silicon-system thin-film layer and/or between the single-crystal silicon substrate and n-type silicon-system thin-film layer.
COPYRIGHT: (C)2011,JPO&INPIT
Daisuke Adachi
Utsu Hisashi
Yoshikawa Shota
Kenji Yamamoto
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