CRYSTALLIZER AND ITS METHOD

Japanese Patent JP3542444

B2

PROBLEM TO BE SOLVED: To obtain a crystallizer of simple structure capable of producing a high-quality and large-diameter crystal in the crystal producing device for cooling a cryatallizable raw material melted in a cylindrical crucible to crystallize it by providing a heat insulating means on the inner cylindrical face of the crucible to interupt the heat radiated from the side face of the crucible in the crucible cooling region and suppressing the temp. difference in the radial direction.
SOLUTION: A crystallizable raw material is melted in a cylindrical crucible, cooled and crystallized in the crystollizer. The crucible consists of the five discoid crucibles 11 to 15 each having a cylindrical side wall connected through threaded parts 16 to 19 and has a partition plate above and below the regions 41 to 45 contg. the crystallizable raw material and in which the material is melted and crystallized and the heat insulating means 21 to 26 provided with the cylindrical side face. Heat insulating members 21 to 26 are preferably used as the heat insulating means 21 to 26.

JP2002274998	METHOD OF GROWING MIXED CRYSTAL SEMICONDUCTOR CRYSTAL AND CRYSTAL GROWTH APPARATUS
WO/2013/040246	DIRECTIONAL SOLIDIFICATION FURNACE HAVING MOVABLE INSULATION SYSTEM
JP4821623	Crucible for growing single crystals and fluoride crystals grown by this crucible

Shuichi Yabu

JP24044496A

July 14, 2004

September 11, 1996

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Canon Inc

C30B11/00; H01L21/208; (IPC1-7): C30B11/00

JP4154686A
JP58130190A
JP6247787A
JP7010679A
JP4349198A
JP4349199A

Keizo Nishiyama
Yuichi Uchio

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