To provide a deposition method of a compound semiconductor film exhibiting excellent mass-productivity while reducing the deposition cost, and ensuring excellent in-plane uniformity of the thickness of a compound semiconductor film being deposited, and excellent surface morphology.

The deposition method of a compound semiconductor film includes a step (step 1) for housing a plurality of processed substrates 1 in the processing chamber of a deposition apparatus while mounting on a substrate mounting jig 114, and a step (step 2) for depositing a compound semiconductor film simultaneously on the plurality of processed substrates 1. In the step 1, the processed substrates 1 are mounted on the substrate mounting jig 114 while leaving a blank, and while mounting a deposition adjustment ring 2, on which a compound semiconductor film being deposited on the processed substrate 1 is deposited, on one blank, the processed substrates 1 and the deposition adjustment rings 2 are housed in the processing chamber. In the step 2, a compound semiconductor film is deposited on the processed substrates 1 while facing the deposition surface of the processed substrate 1 to the deposition adjustment ring 2.