Title:
DEPOSITION OF THIN METAL FILM IN SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3488498
Kind Code:
B2
Abstract:
PURPOSE: To deposit a thin metal film having low resistance and residual stress by reforming the surface of an insulating film through plasma substitution reaction of a reducing gas, introducing a material gas containing a metal for forming the thin metal film onto the reformed surface of insulating film, and then depositing the thin metal film by CVD.
CONSTITUTION: Ar gas and H2 gas are introduced in the vicinity on the surface of a substrate and plasma is generated. Consequently, the Si-O bond on the surface of an interlayer insulating film is broken and an H atom is bonded in place of an O atom thus bringing about a hydrogen termination. A material gas, i.e., WF6 gas, is then introduced along with a reducing gas, i.e., H2 gas, onto the surface of the substrate where CVD is effected. Since the surface of the interlayer insulating film 5 is reformed from oxygen termination into hydrogen termination, substitution reaction is accelerated easily between an H atom and a W atom thus forming a firmly bonded thin film 7 of tungsten on the interlayer insulation film 5. This method allows deposition of a thin metal film with high deposition performance even on an insulating film.
Inventors:
Hirohiko Izumi
Application Number:
JP35299193A
Publication Date:
January 19, 2004
Filing Date:
December 29, 1993
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
C23C16/14; C23C16/02; C23C16/44; H01L21/205; H01L21/285; (IPC1-7): C23C16/14; C23C16/02; H01L21/285
Domestic Patent References:
| JP1191778A | ||||
| JP6091631A | ||||
| JP279446A | ||||
| JP3295258A | ||||
| JP3174727A | ||||
| JP513593A |
Attorney, Agent or Firm:
Koetsu Kokubun