Title:
【発明の名称】拡散層深さ測定装置
Document Type and Number:
Japanese Patent JP2937557
Kind Code:
B2
Abstract:
There is disclosed a diffused layer depth measurement apparatus equipment which has a sample table for supporting a sample cut from a measured semiconductor substrate including a high concentration impurity diffused layer on one surface side and a surface-polished low concentration diffused layer on the opposite surface side in such a manner that the one surface side of the sample is mounted on the sample table, an infrared ray generator, an infrared ray scanner for allowing infrared rays generated by the infrared ray generator to be incident from the side surface of the sample in parallel to the sample surface and for scanning the infrared ray irradiation position in a thickness direction of the sample, a transmitted light measurement unit for measuring the intensity of infrared rays transmitted through the sample, and a diffused layer depth calculation unit for calculating a ratio of a transmitted light intensity measured by the transmitted light measurement means to an incident light intensity to calculate a diffusion depth of the high concentration impurity diffused layer from the relationship between a change point of said ratio and the scanning position. A scattered light measurement unit may be used to calculate a diffusion depth of the high concentration impurity diffused layer from a change point of a scattered light intensity.
Inventors:
KOTANI SHIGEO
Application Number:
JP17278791A
Publication Date:
August 23, 1999
Filing Date:
July 12, 1991
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
G01J1/42; G01R31/28; G06G7/12; H01L21/66; H01S3/00; (IPC1-7): H01L21/66; G01J1/42; G06G7/12; H01S3/00
Domestic Patent References:
| JP5798840A | ||||
| JP233947A | ||||
| JP51137382A | ||||
| JP61213651A |
Attorney, Agent or Firm:
Kazuo Sato (3 others)