PURPOSE: To realize a superconducting thin film grain boundary junction element having a small leakage current of a junction by so forming an LnBa2Cu3Ox film on a single crystalline region that orientation axes perpendicular to a base are different on single crystal regions.
CONSTITUTION: A mask material 6 is placed on an SrTiO3 substrate 1 having 1.1% of a lattice mismatching rate with YBa2Cu3Ox, a PrGaO3 2 having 0.02% of a lattice rate is deposited on the other part, the material 6 is then removed, and a YBa2CU3Ox thin film 3 is deposited on the entire substrate l at 750°C of a substrate temperature. Then, the film 3 in which a c-axis is oriented is deposited on the substrate l, and a YBa2Cu3Ox film 4 in which an a-axis is oriented is deposited on the film 2. In this case, a grain boundary junction 5 is formed at a boundary region between the films 3 and 4. Accordingly, the junction 5 is formed so that a CuO2 surface in which a current flows is brought into vertical contact to reduce a leakage current, and can be easily realized with high yield.
MIYAZAWA SHINTARO
KOBAYASHI JUNYA
| JPH01161880A | 1989-06-26 | |||
| JPH0446098A | 1992-02-17 | |||
| JPH04144994A | 1992-05-19 | |||
| JPH04318984A | 1992-11-10 | |||
| JPH05267735A | 1993-10-15 | |||
| JPH05267736A | 1993-10-15 |