Title:
DETECTING METHOD FOR DEFECT OF PATTERN
Document Type and Number:
Japanese Patent JPS56115533
Kind Code:
A
Abstract:
PURPOSE:To detect the amount of positional deviation between a photomask and a wafer by a method wherein a patterning is performed on a wiring using the mask having two transparent regions slightly covering the slit provided on the wafer from the left and right side directions. CONSTITUTION:A metal film 2 is formed on the substrate 1 having a concaved section 21 with the width of about 4 microns and a photoresist 3 is applied thereon. Then, a photoetching is performed using the photomask 5' having the transparent region 51' covering about 1 micron of the concaved section 21 from the left and right side directions. The photoresist on the concaved section is not exposed by a direct light, but is exposed by a reflected light and the metal film 2, including the concaved section, is left unetched. Then, the existence of continuity between the two pads corresponding to the transparent regions 51' is detected. If there is no continuity, the decision is given that there is a pattern defect caused by the positional deviation between the wafer and the photomask.
Inventors:
SUZUKI KENICHI
Application Number:
JP1767480A
Publication Date:
September 10, 1981
Filing Date:
February 15, 1980
Export Citation:
Assignee:
CHO LSI GIJUTSU KENKYU KUMIAI
International Classes:
H01L21/66; G03F1/00; G03F1/44; H01L21/027; (IPC1-7): H01L21/30