DETECTION OF CONTAMINANT CONCENTRATION OF SEMICONDUCTOR WAFER

Japanese Patent JPH1172488

A

PROBLEM TO BE SOLVED: To accurately detect the contaminant concn. of a semiconductor wafer by washing an oxide film formed on a silicon substrate and detecting the concn. of the contaminant contained in the washed oxide film. SOLUTION: As an oxide film formed on a silicon substrate, a silicon oxide film of silicon dioxide is pref. The oxide film formed on the silicon substrate is washed in an oxide film washing process and, next, the oxide film containing a contaminant is recovered in this oxide film washing process. Subsequently, the concn. of the contaminant contained in the oxide film recovered in an oxide film recovery process is detected. The concn. of the contaminant detected in an oxide film contaminant concn. detection process becomes a parameter suggesting a degree of the contamination of a product wafer probably contaminated in the washing process. The contaminant concn. of the product wafer is specified on the basis of the contaminant concn. of the oxide film detected in the oxide film contaminant concn. detection process. Next, the contaminated degree of the oxide film and that of silicon are detected and the relation between them is led out to convert the contaminant concn. of the oxide film to that of silicon.

SAITO YUKIO
TOSHIYOSHI SHIGENORI
ZUSHI TOKIJI
NISHIMURA TAKANORI

JP15592998A

March 16, 1999

June 04, 1998

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KOMATSU DENSHI KINZOKU KK

G01N1/28; G01N30/00; G01N33/00; H01L21/66; (IPC1-7): G01N30/00; G01N1/28; G01N33/00; H01L21/66

Kimura Takahisa

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