DETECTION OF OCTAHEDRAL OXYGEN DEPOSIT PRESENT IN VICINITY OF SILICON WAFER

Japanese Patent JP2948119

B2

PURPOSE: To make it possible to detect the octahedral oxygen deposit among various kinds of crystal defects present in the vicinity of the surface of a silicon wafer accurately and simply by comparing the withstand voltages of thermal oxide films before and after the octahedral oxygen deposit exposed on the water surface is melted and removed by using dilute hydrofluoric acid.
CONSTITUTION: The surface of a silicon wafer 10 is washed. Heat treatment is performed in oxygen atmosphere, and a thermal oxide film 13 is formed on the surface. Thereafter, polycrystalline silicon electrodes 15 are formed by the specified number on the thermal oxide film 13. Then, a voltage is applied across the specified number of the polycrystalline silicon electrodes 15 and the silicon wafer 10 for every electrode 15, and the withstand voltage of the first oxide film for every electrode 15 is measured. Thereafter, the same silicon wafer as the wafer 10 used beforehand is immersed into dilute hydrofluoric acid, and at least the octahedral oxygen deposit among the various kinds of the crystal defects exposed on the wafer surface is melted. Then, the withstand voltage of the second oxide film for every electrode is measured through the same steps described above, and the withstand voltage of the first oxide film and the withstand voltage of the second oxide film are compared.

JPS63253273	SEMICONDUCTOR INTEGRATED LOGIC CIRCUIT
JPS62194641	WAFER SCALE INTEGRATED CIRCUIT DEVICE
JPS6138574	[Title of the device] IC inspection device

SATO HIROKI
SHIOTA TAKAAKI
MURAKAMI YOSHIO
ISHIGAMI SHUNICHIRO
FURUYA HISASHI

JP4959895A

September 13, 1999

March 09, 1995

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MITSUBISHI MATERIARU KK
MITSUBISHI MATERIARU SHIRIKON KK

H01L21/66; (IPC1-7): H01L21/66

Masayoshi Suda

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