To provide a developing method by which the adhesion of particles is prevented effectively and pattern defects can be reduced in the case of the formation of a resist pattern in a photolithographic process in a semiconductor manufacturing process.

In the developing method in the semiconductor manufacturing process, developing, rinsing and drying treatment are conducted while rotating a semiconductor substrate with a photo-resist film exposed and treated by a developing device with a developing cup. The problem is solved by the developing method in the semiconductor manufacturing process containing a developing process, the first rising process in which a rising liquid is dropped while turning the semiconductor substrate by the first number of revolution by which a photo- resist dissolved in a developer is not attached on the interior wall of the developing cup, the second rinsing process in which the rinsing liquid is dropped while revolving the semiconductor substrate by the second number of revolution higher than the first number of revolution and the developer is replaced completely with the rinsing liquid, and a drying process.