Title:
DEVICE FOR EFFECTING LIQUIDDPHASE EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPS535966
Kind Code:
A
Abstract:
PURPOSE:To immerse a semiconductor substrate which is arranged opposite to a flat plate at a narrow space in a crucible in which a molten liquid for epitaxial growth is accommodated in such a way that its lower portion comes in contact with the molten liquid and permit the molten liquid to be deposited to the face of the substrate making use of capillarity, whereby it is possible to simultaneously form a grown layer having an uniform thickness on a plurality of substrates from one molten liquid.
Inventors:
FUKUDA SHIYOUSEI
HIRANO HITOSHI
HIRANO HITOSHI
Application Number:
JP7982076A
Publication Date:
January 19, 1978
Filing Date:
July 07, 1976
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
C30B15/34; C30B19/06; H01L21/208; H01L21/68; (IPC1-7): B01J17/06; H01L21/208; H01L21/68
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