Title:
DEVICE FOR INSPECTING FOOD QUALITY, FOOD COMPOSITION, FOREIGN MATTER COMPOSITION, EATING QUALITY AND CHANGE STATE
Document Type and Number:
Japanese Patent JP2010074099
Kind Code:
A
Abstract:
To provide a device for inspecting food quality at high sensitivity using an InP system photodiode having reduced dark current and expanded reception sensitivity to a wavelength of 1.8 m without employing a cooling mechanism or the like.
A light-receiving layer 3 has multiple quantum well structure of a III-V group semiconductor, pn junction 15 is formed by selectively diffusing impurity elements in the light-receiving layer, impurity concentration in the light-receiving layer is 51016/cm3, and the device for inspecting the food quality receives light with at least one wavelength included in an absorption band of water with a wavelength of 3 m to perform inspection.
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Inventors:
NAGAI YOICHI
INOGUCHI YASUHIRO
INOGUCHI YASUHIRO
Application Number:
JP2008243181A
Publication Date:
April 02, 2010
Filing Date:
September 22, 2008
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L31/0264; B82Y10/00; B82Y15/00; B82Y20/00; G01J1/02; G01N21/35; G01N21/359; H01L27/146; H01L31/10
Domestic Patent References:
JP2008153311A | 2008-07-03 | |||
JP2007080920A | 2007-03-29 | |||
JPS631079A | 1988-01-06 | |||
JPH05160429A | 1993-06-25 | |||
JP2008270760A | 2008-11-06 | |||
JP2007201432A | 2007-08-09 | |||
JP2008171885A | 2008-07-24 | |||
JP2008205001A | 2008-09-04 | |||
JPH05160426A | 1993-06-25 | |||
JPH0338887A | 1991-02-19 | |||
JP2008014873A | 2008-01-24 |
Other References:
JPN6010047812; M.Horita et al.: 'Metalorganic vapor phase epitaxy growth of InGaAsP multi quantum well laser diodes using entirely or' Journal of Crystal Growth Vol.145, No.1-4, 1994, pp.886-891
JPN6010047813; R.Sidhu et al.: 'A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells' IEEE Photonics Technology Letters Vol.17, No.12, 2005, pp.2715-2717
JPN6010047814; E.Plis et al.: 'Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces' Journal of Applied Physics Vol.100, No.1, 2006, 014510
JPN6010047816; C.P.Seltzer et al.: 'Reliable 1.5 mu m buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) la' IEEE Electronics Letters Vol.25, No.21, 1989, pp.1449-1451
JPN6010047813; R.Sidhu et al.: 'A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells' IEEE Photonics Technology Letters Vol.17, No.12, 2005, pp.2715-2717
JPN6010047814; E.Plis et al.: 'Midwave infrared type-II InAs/GaSb superlattice detectors with mixed interfaces' Journal of Applied Physics Vol.100, No.1, 2006, 014510
JPN6010047816; C.P.Seltzer et al.: 'Reliable 1.5 mu m buried heterostructure, separate confinement, multiple quantum well (BH-SC-MQW) la' IEEE Electronics Letters Vol.25, No.21, 1989, pp.1449-1451
Attorney, Agent or Firm:
Patent Corporation Heart Cluster
Seiichi Watanabe
Seiichi Watanabe