Title:
高バンド・ギャップ材料を含むストリング・ドライバを備えたデバイス及びシステム、並びに形成の方法
Document Type and Number:
Japanese Patent JP7097952
Kind Code:
B2
Abstract:
A device includes a string driver comprising a channel region between a drain region and a source region. At least one of the channel region, the drain region, and the source region comprises a high band gap material. A gate region is adjacent and spaced from the high band gap material. The string driver is configured for high-voltage operation in association with an array of charge storage devices (e.g., 2D NAND or 3D NAND). Additional devices and systems (e.g., non-volatile memory systems) including the string drivers are disclosed, as are methods of forming the string drivers.
Inventors:
Liu, Hai Tao
Fan, Gwang Yui
Mouri, Chandra Vie.
Aida Goda
Pandy, Deepak Chandra
Carda, Kamal M.
Fan, Gwang Yui
Mouri, Chandra Vie.
Aida Goda
Pandy, Deepak Chandra
Carda, Kamal M.
Application Number:
JP2020510085A
Publication Date:
July 08, 2022
Filing Date:
August 23, 2018
Export Citation:
Assignee:
Micron Technology, Ink.
International Classes:
H01L29/78; H01L21/336; H01L29/12; H01L29/786
Domestic Patent References:
| JP2017059607A | ||||
| JP2006013481A | ||||
| JP2017120910A | ||||
| JP2017073550A | ||||
| JP2017143255A | ||||
| JP2011023543A |
Foreign References:
| WO2017130073A1 | ||||
| WO2012091126A1 |
Attorney, Agent or Firm:
Yoshiyuki Osuge
Yasuhisa Nomura
Hiroyoshi Aoki
Masayuki Amada
Yasuhisa Nomura
Hiroyoshi Aoki
Masayuki Amada