Title:
DRESSING METHOD FOR ABRASIVE CLOTH FOR SEMICONDUCTOR WAFER
Document Type and Number:
Japanese Patent JPH07108453
Kind Code:
A
Abstract:
PURPOSE: To enable semiconductor production having high quality and yields by positively removing the clogging of abrasive cloth and by stabilizing the cutting ability of the abrasive cloth.
CONSTITUTION: In a dressing method for abrasive cloth for a semiconductor wafer and used for removing clogging, foreign matters on the abrasive cloth for applying mechanochemical polishing to the semiconductor wafer, an alkaline soln. such as caustic soda, ethanol amine is used for dressing the abrasive cloth. Thus, a decrease in abrasive speed to a abrasive period is improved.
Inventors:
KIYOTAKE SHINJI
TAKAO YOSHIYUKI
ASANO MASAYUKI
TAKAO YOSHIYUKI
ASANO MASAYUKI
Application Number:
JP1093992A
Publication Date:
April 25, 1995
Filing Date:
January 24, 1992
Export Citation:
Assignee:
KYUSHU ELECTRON METAL
SUMITOMO SITIX CORP
SUMITOMO SITIX CORP
International Classes:
B24B37/12; B24B53/007; B24B53/017; H01L21/304; (IPC1-7): B24B37/00; H01L21/304
Attorney, Agent or Firm:
Mori Masazumi