PURPOSE: To provide a dry etching device which is capable of making uniform etching work between a pair of electrodes.

CONSTITUTION: A lower part side electrode 2 to which high frequency power is supplied is concentrically divided into a central part electrode 21 and an outer edge side electrode 22. High frequency power whose output is higher than the outer edge side electrode 22, is arranged to be supplied where a larger electric field is applied to the central part of a wafer 1 compared with the outer edge side. However, when a definite high frequency power is supplied to the lower part electrode 2, the central part of the wafer 1 tends to be subjected to the application of a smaller power field compared with the outer edge side. As a result, this tendency cancels the differential portion of the high frequency power, thereby removing the difference produced between the central part and the outer edge of the wafer W and making the etching rate of the wafer W uniform as a whole.