DRY ETCHING METHOD OF GALLIUM NITRIDE COMPOUND SEMICONDUCTOR

Title:

DRY ETCHING METHOD OF GALLIUM NITRIDE COMPOUND SEMICONDUCTOR

Document Type and Number:

Japanese Patent JP2599250

Kind Code:

B2

Abstract:

PURPOSE: To obtain a smooth surface by eliminating etching residue, etch pit on an etching surface, constantly stabilize etching result, and simultaneously etch a plurality of gallium nitride compound semiconductors with the same result.
CONSTITUTION: Gallium nitride compound semiconductor 101 on an electrode 12 in an etching room 1 is etched by a plasma gas consisting of two types of plasma generating gas, namely chlorine gas and a gas containing silicon, or a silicon element piece 102 and the gallium nitride compound semiconductor 101 are mounted on the electrode in the etching room 1 for etching with the plasma gas of chlorine gas.

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Inventors:

Masao Senoo
Takao Yamada
Bando Kanji
Fukuda Toshio

Application Number:

JP14996094A

Publication Date:

April 09, 1997

Filing Date:

June 30, 1994

Export Citation:

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Assignee:

Nichia Corporation
Plasma System Co., Ltd.

International Classes:

C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23F4/00

Domestic Patent References:

JP62260331A
JP4298036A
JP8162441A

Other References:

ＡＰＰ．ＰＨＹＳ．ＬＥＴＴ．６３［２０］（１９９３−１１−１５）（米）Ｐ．２７７７−２７７９

Attorney, Agent or Firm:

Takehiko Suzue

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