DRY ETCHING METHOD - HITACHI LTD

Title:

DRY ETCHING METHOD

Document Type and Number:

Japanese Patent JP2001053061

Kind Code:

A

Abstract:

To machine an oxide film where a high selection ratio is required with respect to the contact hole and the silicone nitride film of a high aspect ratio by forming a plurality of plasma areas different in electron temperatures and independently controlling the formed quantity of F and ions with respect to CF2 in plasma.

Etching gas is introduced to a plasma processing room 35 from a gas introduction port 24 installed in an antenna 23, an electromagnetic wave between 300 MHz and 600 MHz, which is formed in a high frequency power source 17, is introduced to the plasma processing room 35 from the antenna 23 through a matching box 18 and plasma is generated. An interval between the antenna 23 and a wafer is set to be from 30 mm to 100 mm. Two types of electron temperature areas are generated between the antenna 23 and the wafer. The oxide film is selectively etched with respect to a silicone nitride film with a condition that the gas pressure of the etching processing room 1 is 0.1 Pa to 4 Pa.

Inventors:

IZAWA MASARU
TAJI SHINICHI
YOKOGAWA KATANOBU
NEGISHI NOBUYUKI
KOTO NAOYUKI
ITABASHI NAOSHI
YAMAMOTO SEIJI
TAKAHASHI NUSHITO

Application Number:

JP22408099A

Publication Date:

February 23, 2001

Filing Date:

August 06, 1999

Export Citation:

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Assignee:

HITACHI LTD

International Classes:

H01L21/302; C23F4/00; H01L21/3065; H01L21/311; H01L21/60; H01L21/768; H05H1/46; (IPC1-7): H01L21/3065; C23F4/00; H05H1/46

Attorney, Agent or Firm:

Yukihiko Takada (1 outside)

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