To provide a drying apparatus for shortening a drying time of a wafer while the wafer is rotated in a supported state by fitting a substrate supporting member to an outer circumferential part of the substrate.

An atmosphere shielding plate 12 has four nozzles 28 at a position in accordance with a chuck pin 8, and an outlet opening 28a of each nozzle 28 is put opposite to the shuck pin 8. Each nozzle 28 is connected to a temperature control N2 gas feeding part 34 with a pipe 30 through a valve 32. When the valve 32 is opened by a command from a control part 22, high-temperature nitrogen gas (high-temperature N2 gas) is fed to each nozzle 28 and spouted from the outlet opening 28a to the chuck pin 8. In this way the high-temperature nitrogen gas is spouted to the chuck pin 8 to promote a drying treatment step at a fitting part 36 between the chuck pin 8 and a substrate (S).