電気化学的装置 - Gen-X Power Corporation

Title:

電気化学的装置

Document Type and Number:

Japanese Patent JP4554683

Kind Code:

B2

Abstract:

An electrochemical device including: (a) a semiconductor layer, wherein the semiconductor is silicon or silicon carbide, and where the layer has a thickness from 1 to 1000 μm; (b) a TiO2 layer on the semiconductor layer, where the layer may include an alkaline earth oxide MO up to an amount where the layer is MtiO3, and where the layer has a thickness from 5 nm to 1 mm; (c) a grid of inert metal on the TiO2 layer, arranged so as to be able to apply a electric field across the TiO2 layer; and (d) an ohmic contact on the semiconductor layer.

Inventors:

Christensen Paul Andrew
Light Nicholas George
Edgerton Terence Arthur

Application Number:

JP2007529387A

Publication Date:

September 29, 2010

Filing Date:

September 02, 2005

Export Citation:

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