Title:
ELECTRODE WIRING
Document Type and Number:
Japanese Patent JPS6146048
Kind Code:
A
Abstract:
PURPOSE:To prevent the generation of trouble, such as electromigration, resistance, creeping breaking and the partial fracture of an electrode wiring by forming the thickness of each layer in a monomolecular (or an atomic) layer or more and evaporating substances of two kinds or more in total in two layers or more. CONSTITUTION:A thernmal oxide SiO2 film 1 in thickness such as 0.5mum thickness is formed onto an Si substrate 2, and a Ta layer 3 in 5nm and an Al layer 4 in 100nm are evaporated onto the SiO2 film 1. The Al/Ta films are superposed and evaporated in nine layers, and a wiring in approximately 1mum width is processed. Crystal grains in an electrode wiring can be made small in such a wiring, thus displaying an effect of which defects, such as electromigration resistance, creeping breaking, the fracture of the wiring, etc. are reduced.
Inventors:
IWATA SEIICHI
HINODE KENJI
HINODE KENJI
Application Number:
JP16635784A
Publication Date:
March 06, 1986
Filing Date:
August 10, 1984
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L23/52; H01L21/285; H01L21/3205; H01L23/532; (IPC1-7): H01L21/28; H01L21/88
Attorney, Agent or Firm:
Akio Takahashi
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