PURPOSE: To improve the working quality of the heating member by forming an area having the specific resistance higher by specific times than the specific resistance of base metals to the parts of the base metals which come into contact with a work and forming a film which has a prescribed contact angle or above with the molten metal of a solder, etc. thereon.

CONSTITUTION: The ions which are made into high energy by a magnetic field and electric field are implanted into the conductive base metals 13 by an ion implantation device, etc. The insulating region having the specific resistance higher by ≥100 times the specific resistance of the base metals 13 is formed to the parts of the base metals 13 which come into contact with the work. The film which has ≥10° contact angle with molten solder is then formed to the insulating region of the base metals 13 via a capacity coupling type plasma CVD device and soldering of IC lead wires is executed. Since the insulating region is formed on the base metals, the shunting of electric current from the heating members 13 to a circuit board is eliminated and the sticking of the solder is prevented by the film having the large contact angle. The quality of the heating members is, therefore, improved.