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Patent Searching and Data


Title:
ELECTRON BEAM MICROANALYSIS METHOD FOR THIN FILM
Document Type and Number:
Japanese Patent JPH03223657
Kind Code:
A
Abstract:

PURPOSE: To improve the sensitivity in analysis of a thin-film element by inputting an electron beam into a multilayered thin film sample at an acute angle.

CONSTITUTION: An electron beam 52 emitted from an electron gun 51 is converged through an electromagnetic lens 53 and inputted into a multilayered thin film sample 54 at an acute angle. Characteristic X rays 55 are generated from the surface of the sample. The energy of the X rays 55 is determined with a spectroscopic crystal 56 and an X-ray detector 57. At this time, the smaller the incident angle θ, the larger the intensity of the X rays 55 are increased. On the other hand, the intensity of the X rays from a substrate is decreased. The sensitivity in analysis of the element of the thin film is remarkably increased. Thus the analysis of the element of the multilayered thin film can be positively performed by the electron-beam microanalysis method.


Inventors:
ISHIWATARI OSAMU
Application Number:
JP1846290A
Publication Date:
October 02, 1991
Filing Date:
January 29, 1990
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD
International Classes:
G01N23/225; (IPC1-7): G01N23/225
Attorney, Agent or Firm:
Iwao Yamaguchi