To easily perform film thickness control of a capacitance insulating film in an electrooptical device such as a liquid crystal device.

The electrooptical device includes: transistors (30) provided for respective pixels; pixel electrodes (9) provided corresponding to the transistors; and a storage capacitance (70) electrically connected to the pixel electrodes and made of a first capacitance electrode (2), a second capacitance electrode (5) disposed opposite to the first capacitance electrode from an upper layer side and the capacitance insulating film (7) formed between the first and second capacitance electrodes. The capacitance insulating film has: a first layer (7a) containing hafnium oxide; a second layer (7b) formed in an upper layer of the first layer and containing alumina; a third layer (7c) formed in a lower layer of the first layer and containing alumina; and a fourth layer (7d) formed in an upper layer of the second layer and containing hafnium oxide.