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Title:
ELECTROSTATIC ATTRACTION ELECTRODE, SUBSTRATE PROCESSOR, AND MANUFACTURING METHOD FOR ELECTROSTATIC ATTRACTION ELECTRODE
Document Type and Number:
Japanese Patent JP2008066707
Kind Code:
A
Abstract:

To provide an electrostatic attraction electrode that suppresses the formation of a crack on an insulating layer, to provide a substrate processor thereof, and to provide a manufacturing method for the electrostatic attraction electrode.

An electrostatic chuck 40b includes a base material 41, a second insulating layer 44b that is an alumina-sprayed film, and a first insulating layer 42b interposed between the base material 41 and the second insulating layer 44b. The first insulating layer 42b is made of a ceramic-sprayed film having a linear expansion coefficient that is different from a linear expansion coefficient of the base material 41 by an absolute value of 1410-6[/C] or less. The first insulating layer 42b functions as a buffering layer, which improves the heat resistance of the electrostatic chuck 40b to suppress crack formation.


Inventors:
MINAMI MASAHITO
SATOYOSHI TSUTOMU
SASAKI YOSHIHIKO
Application Number:
JP2007153792A
Publication Date:
March 21, 2008
Filing Date:
June 11, 2007
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/683; C23C4/10; H01L21/3065; H02N13/00
Domestic Patent References:
JP2003060019A2003-02-28
JP2005136350A2005-05-26
JP2006049483A2006-02-16
JP2006060040A2006-03-02
JPH09148420A1997-06-06
JP2000021962A2000-01-21
JPH09213777A1997-08-15
Attorney, Agent or Firm:
Hiroshi Takayama



 
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