ELIMINATION OF PAD GLAZING FOR CHEMICAL/MECHANICAL POLISHING OF ALUMINUS

Japanese Patent JP2001244224

A

To provide a method for flattening Al and/or Al alloy by CMP where the glazing of a pad is reduced, especially a method for achieving the CMP with high manufacturing throughput of the Al and/or Al alloy by eliminating or greatly reducing the glazing of the pad.

Polishing pad glazing during the CMP of the Al and Al alloy is eliminated or greatly reduced by utilizing neutral polishing slurry containing a sufficient amount of surfactant to prevent agglomeration due to the polished by-products of abrasive particles. Embodiments include the CMP of an Al or Al alloy surface employing the slurry containing an abrasive Al2O3 particle, and a surfactant of approximately 0.02 to 5 wt.% to prevent Al2O3 abrasive slurry particles from agglomerating with Al(OH)3 polished by-products. Embodiments further include subsequent pad conditioning using the acid or base to dissolve, or a complexing agent to remove, the Al(OH)3 polishing by- products.

JP3118457	[Title of Invention] Wafer polishing method and top ring used for this method.
JP2012121130	POLISHING DEVICE
JP2006326816	POLISHING APPARATUS

SUN LIZHONG
LI SHIJIAN
REDEKER FRED C

JP2000319581A

September 07, 2001

October 19, 2000

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APPLIED MATERIALS INC

B24B37/005; B24B37/04; B24B53/007; B24B53/017; C09G1/02; C09K3/14; H01L21/304; H01L21/321; (IPC1-7): H01L21/304; B24B37/00; C09K3/14

JPH10270412A	1998-10-09
JPH0955363A	1997-02-25
JPH11277403A	1999-10-12
JPH08255775A	1996-10-01
JPH08294861A	1996-11-12
JPH11262854A	1999-09-28
JPH0770553A	1995-03-14

Yoshiki Hasegawa (2 outside)

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