Title:
EPITAXIAL GROWING APPARATUS AND METHOD
Document Type and Number:
Japanese Patent JPS5837000
Kind Code:
A
Abstract:
PURPOSE:To prevent the occurrence of crystal defects in each substrate by carrying out epitaxial growth after heating the substrate from both rear and front sides of the substrate so as to prevent the warping of the substrate during the epitaxial growth. CONSTITUTION:A disklike susceptor 2 made of graphite is heated with work coils 3 for high frequency heating to heat each substrate 1 mounted on the susceptor 2 from the rear side. At the same time, the front side of the substrate 1 is heated with infrared lamps 4 arranged at the outside of the cover 7 of a reaction chamber made of quartz. A source gas for epitaxial growth is then led onto the substrate 1 with a carrier gas from a conducting nozzle 6. Thus, epitaxial growth can be carried out on the substrate 1 without causing crystal defects in the substrate 1.
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Inventors:
MIZUNO OSAMU
SUZUKI YOSHIAKI
SUZUKI YOSHIAKI
Application Number:
JP13528381A
Publication Date:
March 04, 1983
Filing Date:
August 27, 1981
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
C23C16/48; C30B25/10; C30B29/06; H01L21/205; (IPC1-7): C01B33/02; C30B25/02; C30B29/06; H01L21/205
Attorney, Agent or Firm:
Uchihara Shin