Title:
EPITAXIAL GROWTH DEVICE
Document Type and Number:
Japanese Patent JP2002128595
Kind Code:
A
Abstract:
To provide an epitaxial growth device whose maintenance work can be simplified.
The epitaxial growth device is provided with a pair of wafer holders 11 for holding a pair of semiconductor wafers 10 whose growth-object surface 10a faces each other, and a gas introduction nozzle 6, inserted into the pair of wafer holders 11, for feeding a gas material onto the growth-object surfaces 10a of the pair of semiconductor wafers. An epitaxial layer is formed on the growth-object surfaces 10a. The gas introduction nozzle 6 includes a nozzle tip part 6b attachable/detachable to a nozzle main body part 6a.
Inventors:
NAKAHARA SHINJI
IMAI MASATO
INOUE KAZUTOSHI
ITANI SHINICHI
IMAI MASATO
INOUE KAZUTOSHI
ITANI SHINICHI
Application Number:
JP2000322355A
Publication Date:
May 09, 2002
Filing Date:
October 23, 2000
Export Citation:
Assignee:
SUPER SILICON KENKYUSHO KK
TOYOKO KAGAKU KK
TOYOKO KAGAKU KK
International Classes:
C30B29/06; (IPC1-7): C30B29/06
Attorney, Agent or Firm:
Masatoshi Sato (1 person outside)
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