Title:
EPITAXIAL SUBSTRATE, EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
Document Type and Number:
Japanese Patent JP2007311810
Kind Code:
A
Abstract:
To provide a means for obtaining an electronic device at practical level formed from GaN based materials by improving properties such as high-speed operation.
A first group III nitride base layer 2 and a second group III nitride base layer 3 including at least Al are formed on a base material 1 in order. A region A where an acceptor impurity exists is then formed so as to be extended from a boundary face 9 between the base layer 2 and the base layer 3 to the base layer 3 to form an epitaxial substrate 5, and the substrate 5 is used as a substrate when the electronic device is manufactured.
COPYRIGHT: (C)2008,JPO&INPIT
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Inventors:
SHIBATA TOMOHIKO
TANAKA MITSUHIRO
SAKAI MASAHIRO
TANAKA MITSUHIRO
SAKAI MASAHIRO
Application Number:
JP2007160406A
Publication Date:
November 29, 2007
Filing Date:
June 18, 2007
Export Citation:
Assignee:
NGK INSULATORS LTD
International Classes:
H01L21/338; H01L21/20; H01L29/778; H01L29/812
Domestic Patent References:
| JP2003063898A | 2003-03-05 | |||
| JP3987360B2 | 2007-10-10 | |||
| JP2003282598A | 2003-10-03 | |||
| JP2003257998A | 2003-09-12 | |||
| JP2000068498A | 2000-03-03 | |||
| JP2002057158A | 2002-02-22 | |||
| JPH03174735A | 1991-07-29 | |||
| JPH11103134A | 1999-04-13 |
Attorney, Agent or Firm:
Kenji Sugimura
Kosaku Sugimura
Kiyoshi Kuruma
Shiro Fujitani
Tatsuya Sawada
Kosaku Sugimura
Kiyoshi Kuruma
Shiro Fujitani
Tatsuya Sawada