Title:
EPITAXIAL WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR
Document Type and Number:
Japanese Patent JP2015225884
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide an epitaxial wafer for heterojunction bipolar transistor in which the base resistance and turn-on voltage can be reduced compared with prior art, and to provide a heterojunction bipolar transistor.SOLUTION: In an epitaxial wafer 100 for heterojunction bipolar transistor including a collector layer 103 composed of GaAs, a base layer (second base layer 105) formed on the collector layer 103 and composed of InGaAs, and an emitter layer 106 formed on the second base layer 105 and composed of InGaP, a base layer (first base layer 104) composed of GaAs is inserted between the collector layer 103 and second base layer 105.
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Inventors:
FUJIO SHINJIRO
Application Number:
JP2014108048A
Publication Date:
December 14, 2015
Filing Date:
May 26, 2014
Export Citation:
Assignee:
SCIOCS CO LTD
International Classes:
H01L21/331; H01L21/20; H01L29/737
Domestic Patent References:
| JPH03138949A | 1991-06-13 | |||
| JP2002270817A | 2002-09-20 | |||
| JPH05114603A | 1993-05-07 | |||
| JP2003309128A | 2003-10-31 | |||
| JP2004063639A | 2004-02-26 |
Attorney, Agent or Firm:
Nobuo Kinutani