Title:
ETCHING METHOD
Document Type and Number:
Japanese Patent JP2023153775
Kind Code:
A
Abstract:
To provide a capacitor capable of achieving a large electric capacity.SOLUTION: An etching method according to an embodiment includes: forming a first catalyst layer containing a noble metal on one main surface of a semiconductor substrate; forming a second catalyst layer containing the noble metal and differing in mass of the noble metal per unit area from the first catalyst layer, on the other main surface of the semiconductor substrate; and thereafter supplying an etchant containing an oxidizing agent and hydrogen fluoride to the one main surface and the other main surface.SELECTED DRAWING: None
Inventors:
HIGUCHI KAZUTO
SHIMOKAWA KAZUO
OBATA SUSUMU
SANO MITSUO
SHIMOKAWA KAZUO
OBATA SUSUMU
SANO MITSUO
Application Number:
JP2023111329A
Publication Date:
October 18, 2023
Filing Date:
July 06, 2023
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/822; H01G4/30; H01G4/33; H01L21/306; H01L21/308
Attorney, Agent or Firm:
Patent Attorney Corporation Suzue Patent General Office