Title:
EVALUATING METHOD FOR COMPOUND SEMICONDUCTOR EPITAXIAL WAFER INCLUDING GAAS-ALGAAS SUPERGRID STRUCTURE LAYER
Document Type and Number:
Japanese Patent JP3653622
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide an evaluating method for a compound semiconductor epitaxial wafer, with which information regarding the crystallinity of an epitaxial growth layer including a compound semiconductor layer epitaxially grown on a substrate, especially a GaAs-AlGaAs supergrid structure layer can be provided easily without destroying the wafer by performing Haye's measurement using laser beams.
SOLUTION: One part of a compound semiconductor epitaxial wafer surface, including the compound semiconductor layer epitaxially grown on the substrate, is irradiated with laser beams, light scattered on the surface of wafer is detected while having that irradiated part scanned. The crystallinity of this compound semiconductor layer is evaluated, based on the correlation of the result detected, the previously found detected value of the scattered light on the surface of the wafer and the half-width of light emission peak in the photoluminescence(PL) of the epitaxial growth layer.
Inventors:
Koji Tsunoda
High Musashi Kusagi
High Musashi Kusagi
Application Number:
JP13641597A
Publication Date:
June 02, 2005
Filing Date:
May 27, 1997
Export Citation:
Assignee:
Nikko Materials Co., Ltd.
International Classes:
G01N21/64; G01N21/47; H01L21/66; (IPC1-7): H01L21/66; G01N21/47; G01N21/64
Domestic Patent References:
| JP9167789A | ||||
| JP2239642A | ||||
| JP7332937A | ||||
| JP7249599A |
Attorney, Agent or Firm:
Hiroshi Arafune