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Title:
EXHAUST GAS CLEANING SYSTEM, SEMICONDUCTOR MANUFACTURING APPARATUS, CHEMICAL VAPOR DEPOSITION METHOD OF COMPOUND SEMICONDUCTOR CRYSTAL, AND COMPOUND SEMICONDUCTOR CRYSTAL
Document Type and Number:
Japanese Patent JP2008114139
Kind Code:
A
Abstract:

To provide an efficiently operable semiconductor manufacturing apparatus having multiple crystal deposition furnaces, suppressing increase of facility cost and installation space as a whole, centralizingly cleaning exhaust gases from respective crystal deposition furnaces, and requiring no operation stop of other crystal deposition furnaces even in maintenance of some crystal deposition furnaces.

This exhaust gas cleaning system in the semiconductor manufacturing apparatus has the multiple crystal deposition furnaces. Second exhaust gas discharge pipes not connected to a first exhaust gas cleaning apparatus are connected to respective first exhaust gas discharge pipes connecting the first exhaust gas cleaning apparatus to the respective crystal deposition furnaces. Exhaust gas switching mechanisms are provided at the connection points of the respective two exhaust gas discharge pipes, to switch the discharge route of exhaust gas from the respective crystal deposition furnaces, when necessary. The semiconductor manufacturing apparatus is provided with the exhaust gas cleaning system.


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Inventors:
ITO KEISUKE
KISHIDA TETSUYA
SENDA HIROHIKO
NAKAMURA TAKAO
FUJIWARA SHINSUKE
OKAHISA TAKUJI
KAMIMURA TOMOYOSHI
KURAMOTO TOSHIYUKI
UEDA TOSHIO
UENO MASANORI
Application Number:
JP2006298740A
Publication Date:
May 22, 2008
Filing Date:
November 02, 2006
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
B01D53/46; B01D53/34; B01D53/58; B01D53/68; B01D53/77; C23C16/44; H01L21/31
Attorney, Agent or Firm:
Tetsuji Kamidai
Naomi Kamino