Title:
半導体製造工程から発生する排ガスの処理装置及び方法
Document Type and Number:
Japanese Patent JP4768470
Kind Code:
B2
Abstract:
Disclosed is an apparatus for treating exhaust gas produced in a semiconductor manufacturing process, including an exhaust gas inlet (2) for supplying exhaust gas; an air injection port (32) connected to the exhaust gas inlet (2) for supplying air; an adsorption part (4) connected to the exhaust gas inlet (2) and having an adsorption layer for adsorbing the exhaust gas supplied via the exhaust gas inlet (2); a catalysis part (6) connected to the adsorption part (4) and having a catalyst layer (18) for catalytically treating the exhaust gas supplied from the adsorption part (4); and a water supply port (26) connected to a flow path of the exhaust gas flowing to the catalysis part (6) for supplying water. According to this invention, from the exhaust gas produced in a semiconductor manufacturing process or an LCD manufacturing process, recalcitrant decomposable perfluorocompounds can be removed at 8000C or less, and the exhaust gas containing the perfluorocompounds at large amounts and/or high concentrations can be treated depending on the amount of charged catalyst.
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Inventors:
Do-hee, Lee
Yun-Gi, Hong
Jin-Koo, Lee
Won-Chur, Chang
Doo Sung, Kim
Yun-Gi, Hong
Jin-Koo, Lee
Won-Chur, Chang
Doo Sung, Kim
Application Number:
JP2006044390A
Publication Date:
September 07, 2011
Filing Date:
February 21, 2006
Export Citation:
Assignee:
KOCAT INC.
International Classes:
B01D53/68; B01D53/46; B01D53/58; B01D53/64; B01D53/70; B01D53/77; B01D53/86; B01J20/04; B01J27/053; B01J37/02
Domestic Patent References:
JP2004223302A | ||||
JP2002320822A | ||||
JP10216479A | ||||
JP3249920A | ||||
JP9290128A | ||||
JP1139125A | ||||
JP50079499A | ||||
JP7171336A |
Attorney, Agent or Firm:
Kenzo Hara International Patent Office