To provide an exhaust method of a substrate treatment device which can allow the gas undesired to react with a trapped substance to successively flow even when the trapped substance from the previous gas is already present in a trap.
In the exhaust method of the substrate treatment device to trap and recover a predetermined component in the gas by disposing a trap 1 in the middle of an exhaust pipe 2 connected to a reaction chamber, and cooling the gas flowing in the exhaust pipe 2 by a cooling unit 6 of the trap 1, the cooling unit 6 of the trap 1 is provided in a selectively movable manner at the position in contact with the gas flowing in the exhaust pipe 2 and the position not in contact therewith with the exhaust pipe 2 kept in the gas-tight manner, and the trap 1 is used between a trapping mode and the non-trapping mode in a switching manner by switching the position of the cooling unit 6 according to the kind of the gas flowing in the exhaust pipe 2.
| JP2000252223 | SEMICONDUCTOR MANUFACTURING EQUIPMENT |
| JP2567988 | [Name of invention] Liquid material gasification supply device |
| JP2018031044 | SURFACE TREATMENT METHOD |
OTA TAKEJI
TOMITA MASAYUKI
