To provide a ferroelectric film and a semiconductor device with the same which is used practically with little current leakage on an insulator.

The ferroelectric film formed on an insulator film, which is a polycrystal having perovskite structure, is made of lead titanate or a solid solution containing lead titanate and the diameters of crystal grains are within the range between 50 nm and 1000 nm. The film contains crystals having a columnar structure, preferentially oriented in (001) plane and classified in rhombohedral system. An insular film of titan or titanium oxide is formed on an insulator substrate or a substrate with an insulator film within the thickness between 3 nm and 8 nm to fabricate the semiconductor device which has an MFIS structure.