Title:
電界効果型半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP4846106
Kind Code:
B2
Abstract:
In a field effect semiconductor device in which switching is performed by a gate voltage inputted from outside via a gate resistance circuit for restricting charging and discharge currents flowing between an insulated gate and an emitter, the improvement comprises: an insulated gate electrode portion which is formed by a gate electrode pad and a gate electrode insulated from the gate electrode pad; the gate resistance circuit being inserted between the gate electrode pad and the gate electrode so as to be formed integrally with the insulated gate electrode portion; and the gate resistance circuit comprising a first gate resistance and a first series circuit connected to the first gate resistance in parallel and including a second gate resistance and a first diode such that an anode of the first diode is connected to the gate electrode.
Inventors:
Toru Iwakami
Yoshifumi Tomomatsu
Yoshifumi Tomomatsu
Application Number:
JP2001040389A
Publication Date:
December 28, 2011
Filing Date:
February 16, 2001
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L27/04; H01L21/822; H01L27/02; H01L27/06; H01L29/739; H01L29/78
Domestic Patent References:
| JP64082708A | ||||
| JP3238868A | ||||
| JP11289084A | ||||
| JP5021803A | ||||
| JP5227000A | ||||
| JP6151844A |
Foreign References:
| EP0902537A2 |
Attorney, Agent or Firm:
Aoyama Aoi