PURPOSE: To enhance the efficiency of a field effect semiconductor device by forming a reverse conductivity region to an active layer of predetermined depth in the section under the anode electrode of the active layer formed with cathode and anode thereon.
CONSTITUTION: An Si-doped GaAs active layer 14 is formed on a Cr-doped GaAs high resistance substrate 1, as a mesa structure with etching. Be ions are implanted to the section to be formed with anode electrode 19, and a P type region 16 reaching the substrate 11 is formed. Even if the region 16 does not reach the substrate 11, it may be preferred that there is the substrate 11 in the hole expansion length in the layer 14. Cathode electrode 18 and anode electrode 19 are formed through the contact layers 20, 21 respectively, and a planar type gunn diode is formed in this manner.
ASAI KAZUYOSHI
ISHII YASUNOBU
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