PURPOSE: To obtain the field-effect tuye transistor (FET) of an inner matching type having hifh output, which is small and has a reflection characteristic satis factory for a wide band, by providing a microstrip line where the two shunt connection branches provided in a dielectric substrate are integrated into one body and a power distributor and power synthesizer which have a coupled circuit constituting the branch of serial connection by means of a slot line.
CONSTITUTION: The two shunt connection branches are integrated into one body in the microstrip line on the dielectric substrate 33 and the power distributor 30 and power synthesizer 40 having the coupled circuit where the branch of serial connection is constituted by the slot line 32 are provided. The power distributor 30 and the power synthesizer 40 are minituarized and made into wide band for the portion of the small usage of a one-fouth wave length line. Since input/output terminals 5 and 6 and an isolation terminal are connected in terms of DC, the reflection characteristic being more satisfactory for the wide band than before is obtained so that gain and the high output are obtained in the wide band and also a bias is impressed from an external part.
| JP2003534694 | [Title of Invention] Demodulation filter |
| WO/1991/020125 | LOW OFFSET UNITY GAIN BUFFER AMPLIFIER |
KIYONO KIYOHARU
ITO YASUYUKI
TAKAGI SUNAO
