Title:
チャネルでの電気導電率の完全制御を伴う電界効果トランジスタ
Document Type and Number:
Japanese Patent JP7125787
Kind Code:
B2
Abstract:
The first object of the invention is directed to field-effect gate transistor comprising (a) a substrate, (b) a source terminal, (c) a drain terminal, and (d) a channel between the source terminal and the drain terminal, the channel being a layer of CuxCryO2 in which the y/x ratio is superior to 1. The field-effect gate transistor is remarkable in that the channel of CuxCryO2 presents a gradient of holes concentration. The second object of the invention is directed to a method for laser annealing a field-effect gate transistor in accordance with the first object of the invention.
Inventors:
Renoble, Damian
Application Number:
JP2020515775A
Publication Date:
August 25, 2022
Filing Date:
September 27, 2018
Export Citation:
Assignee:
Luxembourg Institute of Science and Technology (List)
International Classes:
H01L29/786; H01L21/268; H01L21/336; H01L29/78
Domestic Patent References:
| JP2005183984A | ||||
| JP2016025256A | ||||
| JP2017126607A | ||||
| JP2012216780A | ||||
| JP2014520396A | ||||
| JP2009290113A | ||||
| JP2020535306A |
Other References:
Petru Lunca Popaa et al.,Invisible electronics: Metastable Cu-vacancies chain defects for highlyconductive p-type transparent oxide,Applied Materials Today,NL,Elsevier,2017年07月17日,Vol. 9,PP. 184-191,DOI: 10.1016/j.apmt.2017.07.004
Attorney, Agent or Firm:
Kichi Toshio Kawa
Hiroshi Ichikawa
Hiroshi Ichikawa
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